Thermal chemistry of styrene on Si(100)2x1 and modified surfaces: electron-mediated condensation oligomerization and posthydrogenation reactions.

The room-temperature (RT) adsorption and surface reactions of styrene on Si(100)2x1 have been investigated by thermal desorption spectrometry, low-energy electron diffraction, and Auger electron spectroscopy. Styrene is found to adsorb on Si(100)2x1 at a saturation coverage of 0.5 monolayer, which appears to have little effect on the 2x1 reconstructed surface. The chemisorption of styrene on the 2x1 surface primarily involves bonding through the vinyl group, with less than 15% of the surface moiety involved in bonding through the phenyl group. Except for the 2x1 surface where molecular desorption is also observed, the adsorbed styrene is found to undergo, upon annealing on the 2x1, sputtered and oxidized Si(100) surfaces, different thermally induced processes, including hydrogen abstraction, fragmentation, and/or condensation oligomerization. Condensation oligomerization of styrene has also been observed on Si(100)2x1 upon irradiation by low-energy electrons. In addition, large postexposure of atomic hydrogen to the chemisorbed styrene leads to Si-C bond cleavage and the formation of phenylethyl adspecies. Hydrogen therefore plays a decisive role in stabilizing and manipulating the processes of different surface reactions by facilitating different surface structures of Si.